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The iHQ-900E is a medium-current ion implanter introduced by Hwatsing for advanced process nodes. This equipment features exceptional ion beam angle accuracy and beam shape control capabilities, ensuring highly precise dose uniformity across wafers with stable performance. The system employs an advanced three-magnet architecture, delivering industry-leading high-cleanliness beamline conditions. The iHQ-900E is compatible with a wide range of high-end chip manufacturing scenarios: for FinFET logic devices, it enables more precise critical angle control; for memory chip mass production processes such as DRAM and 3D NAND, it reduces per-wafer manufacturing costs; and with its superior metal contamination performance, it meets the stringent manufacturing requirements of CMOS image sensors. Equipped with a high-temperature implantation process module, it also fulfills the doping requirements for SiC power device fabrication. The iHQ-900E is a core and critical equipment that drives Moore's Law advancement and accelerates the large-scale commercialization of the third-generation semiconductor industry.